74HC2G66 Просмотр технического описания (PDF) - Philips Electronics

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производитель

74HC2G66

Bilateral switches

Philips Electronics 

Philips Semiconductors

Bilateral switches

Product specification

74HC2G66; 74HCT2G66

FEATURES

• Wide supply voltage range from 2.0 V to 9.0 V

• Very low ON-resistance:

– 41 Ω (typical) at VCC = 4.5 V

– 30 Ω (typical) at VCC = 6.0 V

– 21 Ω (typical) at VCC = 9.0 V.

• High noise immunity

• Low power dissipation

• ± 25 mA switch current

• SOT505-2 package

• ESD protection:

HBM EIA/JESD22-A114-A exceeds 2000 V

MM EIA/JESD22-A115-A exceeds 200 V.

• Specified from −40 °C to +85 °C and

−40 °C to +125 °C.

DESCRIPTION

The 74HC2G66/74HCT2G66 is a high-speed Si-gate

CMOS device.

The 74HC2G66/74HCT2G66 provides a dual analog

switch. Each switch has two pins (nY and nZ) for input or

output and an active HIGH enable input (pin E). When

pin E is LOW, the belonging analog switch is turned off.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns; Vos is the output voltage at pins nY or nZ, whichever is assigned as an output.

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

HC2G HCT2G

tPZH/tPZL turn-on time nE to Vos

CL = 50 pF; RL = 1 kΩ; VCC = 4.5 V 12

13

ns

tPHZ/tPLZ turn-off time nE to Vos

CL = 50 pF; RL = 1 kΩ; VCC = 4.5 V 12

13

ns

CI

input capacitance

3.5

3.5

pF

CPD

power dissipation capacitance per switch notes 1 and 2

9

9

pF

CS

switch capacitance

8

8

pF

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi + (CL +CS) × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

CS = Switch capacitance in pF;

VCC = supply voltage in Volts.

2. For 74HC2G66 the condition is VI = GND to VCC.

For 74HCT2G66 the condition is VI = GND to VCC − 1.5 V.

2004 May 19

2

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