RD6.2Z Просмотр технического описания (PDF) - NEC => Renesas Technology
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RD6.2Z Datasheet PDF : 4 Pages
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DATA SHEET
ZENER DIODE
RD6.2Z
ZENER DIODE
200 mW ESD PROTECTION (5 V Signal Line) MINI MOLD
DESCRIPTION
Type RD6.2Z is planar type zener diode possessing an allowable
power dissipation of 200 mW.
The purpose is ESD PROTECTION of 5 V Signal Line.
FEATURES
• Low Terminal Capacitance (8 pF TYP.) for ESD protection
• Surge absorber on either side
APPLICATIONS
• ESD protect circuit of 5 V Signal Line.
• Constant Voltage, Constant Current, etc.
MAXIMUM RATINGS (TA = 25°C)
Power Dissipation
P
200 mW (Total)
Surge Reverse Power PRSM
2 W (t = 10 µs, 1 pulse) Fig.5
Junction Temperature Tj
150°C
Storage Temperature Tstg
−55°C to +150°C
PACKAGE DIMENSIONS
(Unit: mm)
2.8±0.2
1.5
0.65+−00..115
2
1
3
Marking
1. Cathode : K1
2. Cathode : K2 SC-59 (EIAJ)
3. Anode : A
K2
2
A
K1
3
1
ELECTRICAL CHARACTERISTICS (TA = 25 ± 2°C)
Type
Number
Zener Voltage
VZ (V)Note 1
MIN.
MAX.
IZ (mA)
Dynamic Impedance
ZZ (Ω)Note 2
MAX.
IZ (mA)
RD6.2Z
5.9
6.5
5
60
5
Note 1. Tested with pulse (40 ms)
2. ZZ is measured at IZ given a very small A.C. signal
Reverse Current
IR (µA)
MAX.
VR (V)
3
5.5
Terminal Capacitance
Ct (pF), f = 1 MHz
TYP.
VR (V)
8
0
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14713EJ2V0DS00 (2nd edition)
(Previous No. DC-2139)
Date Published June 2000 N CP(K)
©
Printed in Japan
1993
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