H2N7000 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
Номер в каталоге
Компоненты Описание
производитель
H2N7000 Datasheet PDF : 4 Pages
| |||
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 2/4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
On-Region Characteristic
VGS=10V
2
4
6
8
VDS, Drain-Source Voltage (V)
8V
7V
6V
5V
4V
10
Drain Current Variation with Gate Voltage
& Temperature
2.5
VDS=10V
Tj=-55ºC
2.0
1.5
Tj=25ºC
1.0
Tj=150ºC
0.5
0.0
0
2
4
6
8
10
VGS, Gate-Source Voltage (V)
Transconductance Variation with Drain Current
& Temperature
0.40
Tj=-55ºC
0.35
0.30
Tj=25ºC
0.25
0.20
Tj=150ºC
0.15
0.10
0.05
0.00
0.0
0.2
0.4
0.6
0.8
1.0
ID, Drain-Source Current (A)
On Resistance Variation with Temperature
2.5
ID=0.5A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
Tj, Junction Temperature (ºC)
H2N7000
Capacitance Characteristics
70
VGS=10V
f=1MHz
60
50
40
30
Ciss
20
10
0
0
Coss
Crss
10
20
30
40
50
VDS, Drain-Source Voltage (V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
Body Diode Forward Voltage Variation
with Current & Temperature
Tj=150ºC
Tj=25ºC
Tj=-55ºC
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage (V)
HSMC Product Specification
Share Link: 