DG648BH45 Просмотр технического описания (PDF) - Dynex Semiconductor

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DG648BH45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG648BH45

5000

4000

Conditions:

Tj = 25°C,

CS = 2.0µF,

dIGQ/dt = 40A/µs

3000

2000

VDRM

0.75x VDRM

0.5x VDRM

1000

0

0

500

1000

1500

2000

2500

On-state current IT - (A)

Fig.15 Turn-off energy vs on-state current

6000

5000

Conditions:

Tj = 25°C,

CS = 2.0µF,

IT = 2000A

VDRM

3000

4000

0.75x VDRM

3000

0.5x VDRM

10/19

2000

20

30

40

50

60

70

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.16 Turn-off energy vs rate of rise of reverse gate current

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