6MBP30VAA060-50 Просмотр технического описания (PDF) - Fuji Electric
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6MBP30VAA060-50 Datasheet PDF : 8 Pages
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6MBP30VAA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
VDC=300V, VCC=15V, Tj=25ºC
4
Switching Loss vs. Collector Current (typ.)
VDC=300V, VCC=15V, Tj=125ºC
4
3
2
Eon
1
Eoff
Err
0
0
10
20
30
40
50
60
Collector Current : IC [A]
Reversed biased safe operating area
VCC=15V, Tj 125ºC [Main Terminal] (min.)
80
3
Eon
2
1
Eoff
Err
0
0
10
20
30
40
50
60
Collector Current : IC [A]
Transient thermal resistance (max.)
10
60
40
RBSOA
20
(Repetitive pulse)
0
0
200
400
600
800
Collector-Emitter voltage : VCE [V]
Power derating for IGBT (max.)
[per device]
200
FWD
IGBT
1
0.1
0.001
0.01
0.1
1
10
Pulse width : PW [sec]
Power derating for FWD(max.)
[per device]
150
150
100
100
50
50
0
0
50
100
150
Case Temperature : TC [ºC]
0
0
50
100
150
Case Temperature : TC [ºC]
6
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