6MBI100S-120 Просмотр технического описания (PDF) - Fuji Electric
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6MBI100S-120 Datasheet PDF : 4 Pages
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6MBI100S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=12Ω,Tj=25oC
1000
500
toff
ton
tr
100
50
0
5000
1000
500
tf
50
100
150
200
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V,Ic=100A,VGE=±15V,Tj=25oC
ton
toff
tr
100
50
10
50
100
200
Gate resistance : Rg [ Ω ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V,Ic=100A,VGE=±15V ,Tj=125oC
80
Eon
60
40
20
Eoff
0
10
Err
50
100
300
Gate resistance : Rg [ Ω ]
1000
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=12Ω,Tj=125oC
toff
500
ton
tr
tf
100
50
0
50
100
150
200
Collector current : Ic [ A ]
25
20
15
10
5
0
0
250
Switching loss vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=12Ω,Tj=125oC
Eon(125 oC)
Eon(25 oC)
Eoff(125 oC)
Eoff(25 oC)
Err(125 oC)
Err(25 oC)
50
100
150
200
Collector current : Ic [ A ]
Reverse bias safe operating area
+VGE=15V,-VGE=<15V, Rg=>12Ω,Tj=<125oC
200
150
100
50
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter voltage : VCE [ V ]
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