BS107 Просмотр технического описания (PDF) - Philips Electronics

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BS107

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

BSP152

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VDS

±VGSO

ID

IDM

Ptot

Tstg

Tj

drain-source voltage

gate-source voltage

DC drain current

peak drain current

total power dissipation

storage temperature

operating junction temperature

open drain

up to Tamb = 25 °C; note 1

MIN.

−

−

−

−

−

−65

−

MAX. UNIT

200 V

40 V

550 mA

3

A

1.5 W

+150 °C

150 °C

THERMAL RESISTANCE

SYMBOL

PARAMETER

THERMAL RESISTANCE

Rth j-a

from junction to ambient; note 1

83.3 K/W

Note

1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 mm2.

STATIC CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

V(BR)DSS

±IGSS

VGS(th)

RDS(on)

IDSS

| Yfs|

Ciss

drain-source breakdown voltage

gate-source leakage current

gate-source threshold voltage

drain-source on-resistance

drain-source leakage current

transfer admittance

input capacitance

Coss

output capacitance

Crss

feedback capacitance

Switching times (see Figs 2 and 3)

ton

turn-on time

toff

turn-off time

CONDITIONS

MIN. TYP. MAX. UNIT

ID = 10 µA; VGS = 0

±VGS = 40 V; VDS = 0

ID = 1 mA; VDS = VGS

ID = 750 mA; VGS = 10 V

VDS = 160 V; VGS = 0

ID = 750 mA; VDS = 25 V

VDS = 25 V; VGS = 0;

200 −

−

V

−

−

100 nA

1.5 −

3.5 V

−

−

2.5 Ω

−

−

100 nA

400 −

−

mS

−

100 −

pF

f = 1 MHz

VDS = 25 V; VGS = 0; f = 1 MHz −

42 −

pF

VDS = 25 V; VGS = 0; f = 1 MHz −

8

−

pF

ID = 750 mA; VDD = 50 V;

VGS = 0 to 10 V

ID = 750 mA; VDD = 50 V;

VGS = 10 to 0 V

−

−

15 ns

−

−

30 ns

April 1995

3

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