5962R9581801VJC Просмотр технического описания (PDF) - Intersil
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5962R9581801VJC Datasheet PDF : 6 Pages
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Die Characteristics
DIE DIMENSIONS:
90 mils x 76 mils x 14 mils ±1 mil
INTERFACE MATERIALS:
Glassivation:
Type: SiO2
Thickness: 8kÅ ±1kÅ
Top Metallization:
Type: AlSi
Thickness: 11kÅ ±2kÅ
Metallization Mask Layout
HS-82C12RH
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
HS-82C12RH
DO0 (4)
DI1 (5)
DO1 (6)
DI2 (7)
DO2 (8)
DI3 (9)
(22) DI7
(21) DO7
(20) DI6
(19) DO6
(18) DI5
(17) DO5
(16) DI4
(15) DO4
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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