5962F9861301QCC(2009) Просмотр технического описания (PDF) - Intersil
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5962F9861301QCC Datasheet PDF : 3 Pages
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Pinouts
s
HS-139RH
(SBDIP CDIP2-T14)
TOP VIEW
OUT 2 1
OUT 1 2
V+ 3
- IN 1 4
+ IN 1 5
- IN 2 6
+ IN 2 7
14 OUT 3
13 OUT 4
12 GND
11 + IN 4
10 - IN 4
9 + IN 3
8 - IN 3
HS-139RH
OUT 2
OUT 1
V+
- IN 1
+ IN 1
- IN 2
+IN 2
HS-139RH
(FLATPACK CDFP3-F14)
TOP VIEW
1
14
2
13
3
12
4
11
5
10
6
9
7
8
OUT 3
OUT 4
GND
+ IN 4
- IN 4
+ IN 3
- IN 3
Die Characteristics
DIE DIMENSIONS:
3750µm x 2820µm (148 mils x 111 mils)
483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: Silox (SiO2)
Thickness: 8.0kÅ ±1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ±2kÅ
Substrate:
Radiation Hardened Silicon Gate, Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
49
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notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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2
FN3573.4
May 19, 2009
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