4N65 Просмотр технического описания (PDF) - Unisonic Technologies

Номер в каталоге

Компоненты Описание

производитель

4N65

4A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

4N65

„ TYPICAL CHARACTERISTICS(Cont.)

Power MOSFET

Capacitance Characteristics

(Non-Repetitive)

1200

1000

800

600

400

Ciss=Cgs+Cgd (Cds=shorted)

Coss=Cds+Cgd Crss=Cgd

Ciss

Coss

Notes:

1. VGS=0V

2. f = 1MHz

200

Crss

0

0.1

1

10

Drain-SourceVoltage, VDS (V)

Gate Charge Characteristics

12

10

VDS=300V

8

VDS=480V

VDS=120V

6

4

2

0 Note: ID=4A

0 5 10 15

20 25

Total Gate Charge, QG (nC)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

7 of 8

QW-R502-397.F

Share Link: