4N65 Просмотр технического описания (PDF) - Unisonic Technologies

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4N65

4A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

4N65

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250μA

650

V

Drain-Source Leakage Current

IDSS

VDS = 650 V, VGS = 0 V

10 μA

Forward

Gate-Source Leakage Current

Reverse

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

IGSS

VGS = 30 V, VDS = 0 V

VGS = -30 V, VDS = 0 V

△BVDSS/△TJ ID=250μA, Referenced to 25°C

100 nA

-100 nA

0.6

V/°С

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0 V

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 2.2A

2.4 2.5 Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS = 25 V, VGS = 0V,

f = 1MHz

520 670 pF

70 90 pF

8 11 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

tR

VDD = 325V, ID = 4.0A,

Turn-Off Delay Time

tD(OFF)

RG = 25Ω (Note 1, 2)

Turn-Off Fall Time

tF

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

QGD

VDS= 520V,ID= 4.0A,

VGS= 10V (Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

13 35 ns

45 100 ns

25 60 ns

35 80 ns

15 20 nC

3.4

nC

7.1

nC

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 4.4A

Maximum Continuous Drain-Source Diode

Forward Current

IS

1.4 V

4.4 A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

17.6 A

Reverse Recovery Time

trr

VGS = 0V, IS = 4.4A,

Reverse Recovery Charge

QRR

dIF/dt = 100 A/μs (Note 1)

Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

250

ns

1.5

μC

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 8

QW-R502-397.F

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