3SK165 Просмотр технического описания (PDF) - Sony Semiconductor
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3SK165 Datasheet PDF : 5 Pages
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3SK165A
GaAs N-channel Dual Gate MES FET
For the availability of this product, please contact the sales office.
Description
The 3SK165A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular, cordless phone.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
8
V
• Gate 1 to source voltage
VG1S
–6
V
• Gate 2 to source voltage
VG2S
–6
V
• Drain current
ID
80
mA
• Allowable power dissipation PD
150
mW
• Channel temperature
Tch
150
°C
• Storage temperature
Tstg –55 to +150 °C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y12-PS
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