3N60K Просмотр технического описания (PDF) - Unisonic Technologies
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3N60K Datasheet PDF : 8 Pages
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UNISONIC TECHNOLOGIES CO., LTD
3N60K
3A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N60K is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* VDS = 600V, ID = 3A
* RDS(ON) = 3.6Ω @VGS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
3N60KL-TF3-T
3N60KG-TF3-T
3N60KL-TN3-R
3N60KG-TN3-R
3N60KL-TN3-T
3N60KG-TN3-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
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Tape Reel
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Copyright © 2012 Unisonic Technologies Co., Ltd
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