RM10(1998) Просмотр технического описания (PDF) - Electronics Industry

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Компоненты Описание

производитель

RM10
(Rev.:1998)

SILICON RECTIFIER DIODES

Electronics Industry 

RATING AND CHARACTERISTIC CURVES ( RM10 - RM10Z )

FIG.1 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

1.5

RM10Z

1.2

RM10 - RM10B

0.9

0.6

0.3

60 Hz RESISTIVE OR INDUCTIVE LOAD

00

25

50

75

100 125 150 175

AMBIENT TEMPERATURE, ( °C)

FIG.2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

150

8.3 ms SINGLE HALF SINE WAVE

Ta = 50 °C

120

RM10 - RM10B

90

60

RM10Z

30

01

2

4 6 10 20 40 60 100

NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS

100

10

1.0

Pulse Width = 300 µs

2% Duty Cycle

0.1

TJ = 25 °C

0.01

0.4

0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

FORWARD VOLTAGE, VOLTS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

10

TJ = 100 °C

1.0

0.1

TJ = 25 °C

0.01

0 20 40 60 80 100 120 140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

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