3DD200 Просмотр технического описания (PDF) - Inchange Semiconductor
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3DD200 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.3A
ICBO
Collector cut-off current
VCB=250V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
tf
Fall time
IC=3A; IB1=0.2A; IB2=-0.3A
Product Specification
3DD200
MIN TYP. MAX UNIT
100
V
250
V
6
V
1.5
V
1.5
V
0.5 mA
0.1 mA
30
120
1
μs
2
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