3DD200 Просмотр технического описания (PDF) - Inchange Semiconductor
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3DD200 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
3DD200
DESCRIPTION
·With TO-3 package
·High collector-base breakdown voltage
: VCBO=250V
APPLICATIONS
·For TV horizontal output applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=75℃
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rθjc
Thermal resistance junction to case
VALUE
250
100
6
3
30
150
-55~150
UNIT
V
V
V
A
W
℃
℃
MAX
1.5
UNIT
℃/W
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