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33970

Dual Gauge Driver Integrated Circuit with Improved Damping Algorithms

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 4. Dynamic Electrical Characteristics

Characteristics noted under conditions 4.75 V < VDD < 5.25 V, -40°C < TA < 125°C, GND = 0 V unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Time from Falling Edge of CS to SO Low Impedance (20)

Time from Rising Edge of CS to SO High Impedance (21)

Time from Rising Edge of SCLK to SO Data Valid (22)

0.2 VDD ≤ SO ≥ 0.8 VDD, CL = 200 pF

Symbol

Min

Typ

Max

Unit

tSO(EN)

–

tSO(DIS)

–

tVALID

–

–

145

ns

1.3

4.0

µs

ns

65

105

Notes

20. Time required for output status data to be terminated at SO. 1.0 kΩ load on SO

21. Time required for output status data to be available for use at SO. 1.0 kΩ load on SO.

22. Time required to obtain valid data out from SO following the rise of SCLK.

33970

8

Analog Integrated Circuit Device Data

Freescale Semiconductor

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