31DQ06TR-M3 Просмотр технического описания (PDF) - Vishay Semiconductors
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31DQ06TR-M3 Datasheet PDF : 6 Pages
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VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3
www.vishay.com
Vishay Semiconductors
10
150
TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
93320_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
TJ = 150 °C
10
1
TJ = 125 °C
0.1
0.01
0.001
0
TJ = 25 °C
20
40
60
93320_02
VR - Reverse Voltage (V)
Fig. 2 - - Typical Values of Reverse Current vs.
Reverse Voltage
1000
130
DC
110
90
Square wave (D = 0.50)
80 % Rated VR applied
see note (1)
70
0
1
2
3
4
5
93320_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
3
D = 0.20
2.5
D = 0.25
D = 0.33
D = 0.50
2 D = 0.75
RMS Limit
1.5
DC
1
0.5
0
0
1
2
3
4
5
93320_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
T = 25 °C
J
100
100
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
0
40
80
120
160
93320_03
VR - Reverse Voltage (V)
Fig. 3 - - Typical Junction Capacitance vs. Reverse Voltage
10
10
100
1000
10 000
93320_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 19-Sep-11
3
Document Number: 93320
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