2SK4179GS Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

2SK4179GS

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

SANYO -> Panasonic 

2SK4179GS

Continued from preceding page.

Parameter

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

VGS(off)

| yfs |

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

VDS=10V, ID=1mA

VDS=10V, ID=40A

ID=40A, VGS=10V

VDS=20V, f=1MHz

VDS=20V, f=1MHz

VDS=20V, f=1MHz

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

VDS=30V, VGS=10V, ID=80A

VDS=30V, VGS=10V, ID=80A

VDS=30V, VGS=10V, ID=80A

IS=80A, VGS=0V

Package Dimensions

unit : mm (typ)

7530-001

10.2

3.6

4.5

1.3

Ratings

Unit

min

typ

max

2

4

V

35

S

10.5

13.7 mΩ

5400

pF

480

pF

350

pF

62

ns

335

ns

220

ns

160

ns

100

nC

30

nC

28

nC

1.07

1.5

V

1.2

0.8

123

2.55

2.55

2.55

2.55

0.4

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220(LS)

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=30V

ID=40A

RL=0.75Ω

D

VOUT

2SK4179GS

P.G

50Ω

S

Avalanche Resistance Test Circuit

L

≥50Ω

10V

0V

50Ω

2SK4179GS

VDD

No. A1498-2/5

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