2SK4177-DL-E Просмотр технического описания (PDF) - SANYO -> Panasonic
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производитель
2SK4177-DL-E Datasheet PDF : 5 Pages
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2SK4177
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=1200V, VGS=0V
VGS=±16V, VDS=0V
1500
V
100 μA
±10 μA
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
⏐yfs⏐
RDS(on)
VDS=20V, ID=1A
ID=1A, VGS=10V
0.7
1.4
10
S
13
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
380
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
70
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
40
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
37
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
152
ns
Fall Time
tf
See specified Test Circuit.
59
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=2A
37.5
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=2A
2.7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=2A
20
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.88
1.2
V
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
Package Dimensions
unit : mm (typ)
7513-002
Package Dimensions
unit : mm (typ)
7001-003
10.2
4.5
1.3
10.2
4.5
1.3
1.2
0.8
123
2.55
2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
12 3
0.8
1.2
2.55
2.55
2.55
2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤0.5%
G
VDD=200V
ID=1A
RL=200Ω
D
VOUT
2SK4177
P.G
RGB=50Ω S
Avalanche Resistance Test Circuit
≥50Ω
RG
10V
0V
50Ω
L
DUT
VDD
No. A0869-2/5
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