2SK4171 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

2SK4171

N-Channel Silicon MOSFET

SANYO -> Panasonic 

2SK4171

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

Conditions

V(BR)DSS

IDSS

IGSS

VGS(off)

⏐yfs⏐

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=1mA, VGS=0V

VDS=60V, VGS=0V

VGS= ±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=50A

ID=50A, VGS=10V

ID=50A, VGS=4V

VDS=20V, f=1MHz

VDS=20V, f=1MHz

VDS=20V, f=1MHz

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

VDS=30V, VGS=10V, ID=100A

VDS=30V, VGS=10V, ID=100A

VDS=30V, VGS=10V, ID=100A

IS=100A, VGS=0V

Package Dimensions

unit : mm (typ)

7507-002

10.2

5.1 3.6

4.5

1.3

Ratings

Unit

min

typ

max

60

V

1 µA

±10 µA

1.2

2.6

V

35

60

S

5.5

7.2 mΩ

7.5

10.5 mΩ

6900

pF

740

pF

540

pF

48

ns

380

ns

500

ns

370

ns

135

nC

18

nC

50

nC

1.0

1.2

V

1.2

0.8

123

2.55

2.55

0.4

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10µs

D.C.≤1%

G

VDD=30V

ID=50A

RL=0.6Ω

D

VOUT

2SK4171

P.G

50Ω

S

Avalanche Resistance Test Circuit

L

≥50Ω

10V

0V

50Ω

2SK4171

VDD

No. A0787-2/5

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