2SK4108 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SK4108 Datasheet PDF : 6 Pages
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2SK4108
RDS (ON) − Tc
1.0
Common source
VGS = 10 V
Pulse Test
0.8
0.6
10
0.4
ID = 20A
5
0.2
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
100
Common source
Tc = 25°C
Pulse Test
IDR − VDS
10
10
1
5
0.1
0
3
1
VGS = 0 V
0.2 0.4 0.6 0.8 1.0
1.2 1.4
Drain-source voltage VDS (V)
10000
1000
Capacitance – VDS
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
1
Crss
10
100
Drain-source voltage VDS (V)
Vth − Tc
5
Common source
VDS = 10 V
ID = 1mA
Pulse Test
4
3
2
1
0
−80
−40
0
40
80
120 160
Case temperature Tc (°C)
PD − Tc
200
150
100
50
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input / output
characteristics
500
20
VDS
400
300
200
100
16
200V
VDD = 100V
VGS
12
400V
8
Common source
ID = 20 A
Ta = 25°C
4
Pulse Test
0
0
0
20
40
60
80
100
120
Total gate charge Qg (nC)
4
2007-06-29
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