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2SK4108 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
Toshiba
2SK4108 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
10
Common source 10
Tc
=
25°C
6
Pulse Test
8
8
6
4
5.5
5.25
5
2
4.5
VGS
=
4V
0
0
1
2
3
4
5
Drain-source voltage VDS (V)
I
D
– V
GS
50
Common source
VDS
=
20 V
Pulse Test
40
30
20
25
100
Tc
= −
55°C
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
2SK4108
20
10
8
16
I
D
– V
DS
Common source
Tc
=
25°C
6
Pulse Test
5.75
12
5.5
8
5.25
5
4
4.5
VGS
=
4 V
0
0
10
20
30
40
50
Drain-source voltage VDS (V)
V
DS
– V
GS
20
Common source
Tc
=
25°C
Pulse Test
16
12
8
ID
=
20 A
4
10
5
0
0
4
8
12
16
20
Gate-source voltage VGS (V)
|Y
fs
| – I
D
100
1.0
Common source
VDS
=
20 V
Pulse Test
Tc
= −
55°C
100
10
25
0.1
1
1
1
10
100
Drain current ID (A)
3
R
DS (ON)
– I
D
Common source
Tc
=
25°C
VGS
=
10 V
Pulse Test
10
100
Drain current ID (A)
2007-06-29
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