2SK0657 Просмотр технического описания (PDF) - Panasonic Corporation
Номер в каталоге
Компоненты Описание
производитель
2SK0657 Datasheet PDF : 3 Pages
| |||
Silicon MOS FETs (Small Signal)
2SK0657 (2SK657)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
50
V
8
V
±100
mA
±200
mA
400
mW
150
°C
−55 to +150
°C
(0.85)
0.55±0.1
0.45±0.05
1
2
3
(2.5) (2.5)
Internal Connection
G
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
D
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
Gate threshold voltage
Vth
ID = 100µA, VDS = VGS
1.5
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
10
µA
50
µA
V
3.5
V
50
Ω
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20
mS
Input capacitance (Common Source) Ciss
15
pF
Output capacitance (Common Source) Coss
VDS = 5V, VGS = 0, f = 1MHz
6
pF
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton*
Turn-off time
toff*
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
1.2
pF
10
ns
20
ns
* ton, toff measurement circuit
Vout 200Ω
90%
VGS = 5V
50Ω
Vin
VDD = 5V
Vout
10%
10%
90%
ton
toff
Note) The part number in the parenthesis shows conventional part number.
1
Share Link: 