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K4042 Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание
производитель
K4042 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK4042
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
V (BR) GSS IG = ±10 μA, VDS = 0 V
±30
V
IDSS
VDS = 500 V, VGS = 0 V
100
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
500
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 4 A
0.70 0.97 Ω
Yfs
VDS = 10 V, ID = 4 A
3.0 6.5
S
Ciss
1050
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
10
pF
Coss
110
tr
10 V
VGS
ID = 4 A VOUT
26
0V
ton
50 Ω
RL =
50 Ω
45
ns
tf
38
VDD ∼− 200 V
toff
Duty 1%, tw = 10 μs
130
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 8 A
Qgd
28
16
nC
12
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 8 A, VGS = 0 V
IDR = 8 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
8
A
32
A
1.7
V
190
ns
0.5
μC
Marking
K4042
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29

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