2SK3943-ZP Просмотр технического описания (PDF) - NEC => Renesas Technology

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производитель

2SK3943-ZP

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

PACKAGE DRAWING (Unit: mm)

TO-263 (MP-25ZP)

No plating

10.0±0.3

7.88 MIN.

4

0.5

4.45±0.2

1.3±0.2

0.025 to

0.25

0.75±0.2

2.54

12 3

0.6±0.2

0 to 8 o

0.25

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2SK3943

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Data Sheet D17188EJ1V0DS

7

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