2SK3943 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3943 Datasheet PDF : 8 Pages
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2SK3943
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
VDS = 40 V, VGS = 0 V
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 41 A
VGS = 10 V, ID = 41 A
RDS(on)2 VGS = 5.5 V, ID = 41 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 41 A
Rise Time
Turn-off Delay Time
tr
td(off)
VGS = 10 V
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 32 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)1
ID = 82 A
IF = 60 A, VGS = 0 V
VF(S-D)2 IF = 82 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
trr
IF = 82 A, VGS = 0 V
Qrr
di/dt = 100 A/µs
MIN.
2.0
21
TYP.
2.5
43
2.9
3.8
5800
860
510
29
10
69
12
93
28
28
0.88
0.92
40
49
MAX.
1.0
±10
3.0
3.5
5.6
1.2
1.5
UNIT
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D17188EJ1V0DS
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