2SK3716 Просмотр технического описания (PDF) - NEC => Renesas Technology

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Компоненты Описание

производитель

2SK3716

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

6.5 ±0.2

5.0 ±0.2

4

123

1.1 ±0.2

2.3 ±0.2

0.5 ±0.1

2.3 2.3

0.5

+0.2

−0.1

0.5

+0.2

−0.1

1. Gate

2. Drain

3. Source

4. Fin (Drain)

2SK3716

2) TO-252 (MP-3Z)

6.5 ±0.2

5.0 ±0.2

4

2.3 ±0.2

0.5 ±0.1

123

1.1 ±0.2

2.3 2.3

0.9 0.8

MAX. MAX.

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against

ESD. When this device actually used, an additional protection circuit is externally required if a

voltage exceeding the rated voltage may be applied to this device.

6

Data Sheet D16538EJ2V0DS

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