2SK4065 Просмотр технического описания (PDF) - SANYO -> Panasonic

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2SK4065

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

SANYO -> Panasonic 

Ordering number : ENA0324A

2SK4065

SANYO Semiconductors

DATA SHEET

2SK4065

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Features

• ON-resistance RDS(on)1=4.6mΩ (typ.)

• 4V drive

• Input capacitance Ciss=12200pF (typ.)

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Avalanche Energy (Single Pulse) *1

EAS

Avalanche Current *2

IAV

Note :*1 VDD=30V, L=200μH, IAV=70A (Fig.1)

*2 L≤200μH, single pulse

Conditions

PW≤10μs, duty cycle≤1%

Tc=25°C

Ratings

Unit

75

V

±20

V

100

A

400

A

1.65

W

90

W

150

°C

--55 to +150

°C

735 mJ

70

A

Package Dimensions

unit : mm (typ)

7535-001

10.0

4.5

1.3

4

2SK4065-DL-1E

8.0

Product & Package Information

• Package

: TO-263-2L

• JEITA, JEDEC

: SC-83, TO-263

• Minimum Packing Quantity : 800 pcs./reel

Packing Type: DL

Marking

K4065

1 23

1.27

0.8

2.54

2.54

5.3

0.254

0.5

1 : Gate

2 : Drain

3 : Source

4 : Drain

DL

Electrical Connection

2, 4

1

LOT No.

SANYO : TO-263-2L

3

http://semicon.sanyo.com/en/network

53012 TKIM TC-00002767/41006QA MSIM TB-00002239 No. A0324-1/7

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