2SK3847 Просмотр технического описания (PDF) - Toshiba
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производитель
2SK3847 Datasheet PDF : 6 Pages
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2SK3847
rth − tw
10
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
Single pulse
PDM
t
T
Duty = t/T
0.01
Rth (ch-c) = 4.17°C/W
0.01
10 μ
100 μ
1m
10 m
100 m
1
10
Pulse width tw (s)
Safe operating area
1000
100 ID max (pulse) *
ID max (continuous)
1 ms *
10 ms *
10
DC operation
Tc = 25°C
1
* Single nonrepetitive pulse
Tc = 25°C
0.1
0.1
Curves must be derated
linearly with increase in
temperature.
1
VDSS max
10
100
Drain−source voltage VDS (V)
EAS – Tch
100
80
60
40
20
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 25 V, L = 48 μH
Waveform
ΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5
2006-09-27
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