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Номер в каталоге
Компоненты Описание
2SK3797(2005) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SK3797
(Rev.:2005)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI)
Toshiba
2SK3797 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3797
r
th
– t
w
10
1
0.1
0.01
Duty=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
10
μ
100
μ
1
m
10
m
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
2.5°C/W
100
m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
ID max (PULSED)
*
100
µ
s
*
ID max (CONTINOUS)
10
1 ms
*
DC OPERATION
Tc
=
25°C
1
*
SINGLE NONREPETITIVE
0.1
PULSE Tc
=
25°C
CURVES MUST BE
DERATED LINEARLY WITH
0.01
1
INCREASE IN TEMPERATURE
VDSS max
10
100
1000
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
1200
1000
800
E
AS
– T
ch
600
400
200
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVEFORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
10.7mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
B
BVDSS
VDSS
−
VDD
⎟⎟⎠⎞
5
2005-01-24
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