2SK3797(2005) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SK3797 Datasheet PDF : 6 Pages
| |||
Electrical Characteristics (Ta = 25°C)
2SK3797
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6.5 A
VDS = 10 V, ID = 7.0 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
⎯ ±10 µA
±30
⎯
⎯
V
⎯
⎯ 100 µA
600
⎯
⎯
V
2.0
⎯
4.0
V
⎯
0.32 0.43
Ω
2.1 7.5
⎯
S
⎯ 3100 ⎯
⎯
20
⎯
pF
⎯ 270 ⎯
tr
10 V
ID = 6.5 A VOUT
⎯
60
⎯
VGS
0V
ton
RL =
⎯
110
⎯
50 Ω
30Ω
ns
tf
⎯
50
⎯
VDD ∼− 200 V
toff
Duty <= 1%, tw = 10 µs
⎯
215
⎯
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 13 A
Qgd
⎯
62
⎯
⎯
40
⎯
nC
⎯
22
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 13 A, VGS = 0 V
IDR = 13 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯
⎯
13
A
⎯
⎯
52
A
⎯
⎯
−1.7
V
⎯ 1050 ⎯
ns
⎯
15
⎯
µC
Marking
K3797
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2005-01-24
Share Link: 