2SK3797(2005) Просмотр технического описания (PDF) - Toshiba

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производитель

2SK3797
(Rev.:2005)

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI)

Toshiba 

2SK3797

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)

2SK3797

Switching Regulator Applications

Unit: mm

• Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)

• High forward transfer admittance: |Yfs| = 7.5 S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 600 V)

• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

Drain current

DC (Note 1)

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

VDSS

VDGR

VGSS

ID

IDP

PD

EAS

IAR

EAR

Tch

Tstg

600

V

600

V

±30

V

13

A

52

50

W

1033

mJ

13

A

5.0

mJ

150

°C

-55~150

°C

Thermal Characteristics

1: Gate

2: Drain

3: Source

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10U1B

Weight: 1.7 g (typ.)

Characteristic

Symbol

Max

Unit

2

Thermal resistance, channel to case

Rth (ch-c)

2.5

°C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω

1

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

3

1

2005-01-24

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