2SK3767 Просмотр технического описания (PDF) - Toshiba
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производитель
2SK3767 Datasheet PDF : 6 Pages
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2SK3767
rth – tw
10
3
1
Duty=0.5
0.3 0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.003
0.001
10μ
0.01
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 5℃/W
1ｍ
10ｍ
100ｍ
1
10
Pulse width tw (s)
Safe operating area
100
10
ID max (PULSED) *
ID max (CONTINUOUS) *
100 μs *
1 DC OPERATION
Tc = 25°C
1 ms *
0.1
※ Single nonrepetitive pulse
Tc=25℃
Curves must be derated linearly with
increase in temperature.
0.01
1
10
VDSS max
100
Darin-source voltage VDS (V)
1000
EAS – Tch
200
160
120
80
40
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 41mH
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5
2009-09-29
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