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Номер в каталоге
Компоненты Описание
2SK3767(2006) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SK3767
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
2SK3767 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3767
r
th
– t
w
10
3
1
Duty=0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.003
0.001
10
μ
0.01
100
μ
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
5
℃
/W
1
m
10
m
100
m
1
10
Pulse width t
w
(s)
Safe operating area
100
10
ID max (PULSED)
*
ID max (CONTINUOUS)
*
100
μ
s
*
1
DC OPERATION
Tc
=
25°C
1 ms
*
0.1
※
Single nonrepetitive pulse
Tc=25
℃
Curves must be derated linearly with
increase in temperature.
0.01
1
10
VDSS max
100
Darin-source voltage V
DS
(V)
1000
E
AS
– T
ch
200
160
120
80
40
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVE FORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
41mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2006-11-08
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