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Номер в каталоге
Компоненты Описание
2SK3767(2006) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SK3767
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
2SK3767 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
10
Common source
VGS
=
10V
8
pulse test
6
ID=2A
4
1
0.5
2
0
-100
-50
0
50
100
150
200
Case temperature (°C)
2SK3767
10
Common source
Tc
=
25°C
Pulse test
I
DR
– V
DS
1
0.1 10
3
1
VGS
=
0,
−
1 V
0.01
0
−
0.4
−
0.8
−
1.2
−
1.6
Drain-source voltage (V)
Capacitance – V
DS
1000
Ciss
100
Coss
10
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
Drian-source voltage V
DS
(V)
V
th
– Tc
6
Common source
5
VDS
=
10 V
ID
=
1 mA
4
Pulse test
3
2
1
0
−
80
−
40
0
40
80
120
150
Case temperature Tc (°C)
P
D
– Tc
50
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic Input / output
characteristics
800
16
600
400
200
0
0
200V
12
100V
VDD
=
400V
8
Common source
ID
=
7.5 A
4
Tc
=
25°C
Pulse test
0
2
4
6
8
10
12
Total gate charge Q
g
(nC)
4
2006-11-08
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