2SK3760 Просмотр технического описания (PDF) - Toshiba
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2SK3760 Datasheet PDF : 6 Pages
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2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ)
2SK3760
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
3.84±0.2
3.84±0 . 2
101.05. 5mmaax x
unit：ｍｍ
44..77mmaxax
1.3
1.3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
11..55mmaxax
0.81
0.81 max
00..4455
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
ID P
PD
EA S
IAR
EAR
Tc h
Tstg
600
V
600
V
±30
V
3.5
A
14
60
W
6.3
mJ
3.5
A
6
mJ
150
°C
-55~150
°C
2.25.544
123
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
JEITA
TO-220AB
SC-46
Thermal Characteristics
TOSHIBA ―
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
Unit
2.08
°C/W
83.3
°C/W
Weight : 2.0g(typ.)
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.9 mH, IAR = 3.5 A, RG = 25 Ω
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2004-02-26
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