2SK3560 Просмотр технического описания (PDF) - KEXIN Industrial

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Компоненты Описание

производитель

2SK3560

Silicon N-channel power MOSFET

KEXIN Industrial 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Gate-drain surrender voltage

Diode forward voltage

Gate threshold voltage

Drain-source cutoff current

Gate-source cutoff currentt

Drain-source on resistance

Forward transfer admittance

Short-circuit forward transfer capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Reverse recovery time

Reverse recovery charge

Total gate charge

Gate-source charge

Gate-drain charge

Channel-case heat resistance

Channel-atmosphere heat resistance

2SK3560

Symbol

Testconditons

VDSS ID = 1 mA, VGS = 0

VDSF IDR = 30 A, VGS = 0

Vth VDS = 25 V, ID = 1 mA

IDSS VDS = 184 V, VGS = 0

IGSS VGS = 30 V, VDS = 0

RDS(on) VGS = 10 V, ID = 15 A

Yfs VDS = 25 V, ID = 15 A

Ciss

Coss VDS = 25 V, VGS = 0, f = 1 MHz

Crss

td(on) VDD 100 V, ID = 15 A

tr RL 6.7 Ù, VGS = 10 V

td(off)

tf

trr L = 230 ìH, VDD = 100 V

Qrr IDR = 15 A, di /dt = 100 A/ ìs

Qg VDD = 100 V, ID = 25 A

Qgs VGS = 10 V

Qgd

Rth(ch-c)

Rth(ch-a)

TransistIoCrs

Min Typ Max Unit

230

V

-1.5 V

2

4

V

100 ìA

1 ìA

55 74 mÙ

8 19

S

2 330

pF

356

pF

44

pF

39

ns

37

ns

221

ns

46

ns

164

ns

853

nC

51.2

nC

8.2

nC

19.4

nC

2.5 /W

89.2 /W

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