2SK3668 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге

Компоненты Описание

производитель

2SK3668

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

PACKAGE DRAWING (Unit: mm)

TO-263 (MP-25ZK)

No plating

10.0±0.3

7.88 MIN.

4

4.45±0.2

1.3±0.2

0.025 to

0.25

2SK3668

0.75±0.2

2.54

123

0.5±0.2

0 to 8 o

0.25

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

Data Sheet D16547EJ2V0DS

7

Share Link: