2SK3510 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3510 Datasheet PDF : 8 Pages
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DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
P u ls e d
350
300
250
200
VGS = 10 V
150
100
50
0
0
1
2
3
4
VDS - Drain to Source Voltage - V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1 mA
-50
0
50
100
150
200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
18
16
14
12
10
8
6
4
2
0
1
P u ls e d
VGS = 10 V
10
100
ID - Drain Current - A
1000
2SK3510
FORWARD TRANSFER CHARACTERISTICS
1000
VDS = 10 V
Pulsed
100
10
TA = 150°C
75°C
25°C
−55°C
1
0.1
1
2
3
4
5
6
7
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
P ulsed
10
TA = 150°C
1
75°C
25°C
−55°C
0.1
0.01
0 .0 1
0 .1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
P u ls e d
8
ID = 42 A
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
4
Data Sheet D15687EJ1V0DS
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