2SK3564(2006) Просмотр технического описания (PDF) - Toshiba
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производитель
2SK3564 Datasheet PDF : 6 Pages
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2SK3564
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS IG =±10 μA, VDS = 0 V
±30 ⎯
⎯
V
IDSS
VDS = 720 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
900 ⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
RDS (ON) VGS = 10 V, ID = 1.5 A
⎯
3.7 4.3
Ω
⎪Yfs⎪
VDS = 20 V, ID = 1.5 A
0.65 2.6
⎯
S
Ciss
⎯ 700 ⎯
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
15
⎯
pF
Coss
⎯
75
⎯
tr
10 V
VGS
ID = 1.5 A VOUT
⎯
20
⎯
0V
ton
50 Ω
RL =
⎯
60
⎯
133 Ω
ns
tf
⎯
35
⎯
VDD ∼− 200 V
toff
Duty <= 1%, tw = 10 μs
⎯ 125 ⎯
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 3 A
Qgd
⎯
17
⎯
⎯
10
⎯
nC
⎯
7
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 3 A, VGS = 0 V
IDR = 3 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
3
A
⎯
⎯
9
A
⎯
⎯
−1.9
V
⎯
850
⎯
ns
⎯
4.7
⎯
μC
Marking
K3564
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-10
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