2SK3380 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SK3380

Silicon N Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SK3380

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

Pch

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

Ratings

Unit

30

V

±20

V

300

mA

1.2

A

300

mA

300

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown V(BR)DSS 30

voltage

Gate to source breakdown V(BR)GSS ±20

voltage

Gate to source leak current IGSS

—

Zero gate voltege drain

I DSS

—

current

Gate to source cutoff voltage VGS(off)

1.3

Static drain to source on state RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance |yfs|

145

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Note: 2. Pulse test

See characteristics curves of 2SK3288

Typ

—

—

—

—

—

1.26

2.8

220

6

18

2

200

600

1100

1100

Max

—

—

±5

1

2.3

1.44

3.44

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

mS

pF

pF

pF

ns

ns

ns

ns

Test Conditions

ID = 100 µA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 30 V, VGS = 0

ID = 10µA, VDS = 5 V

ID = 150 mA,VGS = 10 V Note 2

ID = 50 mA,VGS = 4 V Note 2

ID = 150 mA, VDS =10 V Note 2

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 150 mA, VGS = 10 V

RL = 66.6 Ω

2

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