2SK3310 Просмотр технического описания (PDF) - Toshiba

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2SK3310

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

Toshiba 

2SK3310

rth – tw

10

5

3

1

Duty = 0.5

0.5

0.3 0.2

0.1

0.1

0.05

0.05

0.02

0.03

0.01

0.01

0.005

0.003

0.001

10 μ

Single pulse

100 μ

1m

10 m

PDM

t

T

Duty = t/T

Rth (ch-c) = 3.125°C/W

100 m

1

10

Safe operating area

100

Pulse width tw (S)

400

EAS – Tch

ID max (pulse) *

ID max

300

100 μs *

(continuous)

10

1 ms *

200

1

DC operation

Tc = 25°C

0.1

0.01

1

* Single nonrepetitive pulse

Tc = 25°C

Curves must be derated

linearly with increase in

temperature.

10

VDSS max

100

Drain-source voltage VDS (V)

1000

100

0

25

50

75

100

125

150

Channel temperature (initial) Tch (°C)

15 V

−15 V

BVDSS

IAR

VDD

VDS

Test circuit

RG = 25 Ω

VDD = 90 V, L = 3.7 mH

Wave form

ΕAS

=

1

2

⋅L

⋅I2

⋅

⎜⎜⎝⎛

BVDSS

BVDSS − VDD

⎟⎟⎠⎞

5

2009-09-29

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