2SK3310(2002) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
| 2SK3310 Datasheet PDF : 0 Pages | |||
2.0
Common source
VGS = 10 V
Pulse test
1.6
RDS (ON) – Tc
1.2
ID = 10 A
0.8
5
2.5
0.4
0
-80
-40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – VDS
3000
1000
Ciss
300
100
Coss
30 Common source
VGS = 0 V
10 f = 1 MHz
Tc = 25°C
3
0.1
0.3 1
3
Crss
10
30
100 300
Drain-source voltage VDS (V)
2SK3310
100
Common source
Tc = 25°C
Pulse test
10
IDR – VDS
1
10
0.1
0.01
0
5
1
3
VGS = 0, -1 V
-0.2
-0.4
-0.6
-0.8
-1
-1.2
Drain-source voltage VDS (V)
Vth – Tc
6
Common source
VDS = 10 V
5
ID = 1 mA
Pulse test
4
3
2
1
0
-80
-40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
50
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
500
20
Common source
ID = 10 A
400
Tc = 25°C
16
VDD = 90 V
Pulse test
VDS
300
12
180
360
200
8
VGS
100
4
0
0
0
10
20
30
40
50
Total gate charge Qg (nC)
4
2002-09-04
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