2SK3481-Z Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3481-Z Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
Pulsed
100
80
VGS = 4.5 V
60
10 V
40
20
0
−50
ID = 15 A
0
50
100
150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
Coss
Crss
VGS = 0 V
10 f = 1 MHz
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Drain Current - A
2SK3481
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
10
VGS = 10 V
0V
1
0.1
0.01
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
td(off)
10
tr
VDD = 50 V
VGS = 10 V
1 RG = 0 Ω
0.1
1
td(on)
tf
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
80
VDD = 80 V
50 V
20 V
60
8
VGS
6
40
4
20
2
VDS
0
ID = 30 A 0
0
10 20 30 40 50 60
QG - Gate Charge - nC
Data Sheet D15063EJ1V0DS
5
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