2SK3481-Z Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3481-Z Datasheet PDF : 8 Pages
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2SK3481
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 15 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 15 A
RDS(on)2 VGS = 4.5 V, ID = 15 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 50 V, ID = 15 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 80 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD ID = 30 A
Body Diode Forward Voltage
VF(S-D) IF = 30 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 30 A, VGS = 0 V
Qrr
di/dt = 100 A/ µs
MIN. TYP. MAX. UNIT
10 µA
±10 µA
1.5 2.0 2.5 V
9
18
S
40 50 mΩ
44 58 mΩ
2300
pF
230
pF
120
pF
13
ns
10
ns
53
ns
5.0
ns
48
nC
7.0
nC
12
nC
1.0
V
70
ns
160
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VGS
VGS
Wave Form
0 10%
VGS
90%
VDD
ID
90%
ID
ID
0 10%
Wave Form
90%
10%
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D15063EJ1V0DS
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