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RMDA20420

20-42 GHz General Purpose MMIC Amplifier

Raytheon Company 

RMDA20420

RF Components 20-42 GHz General Purpose MMIC Amplifier

ADVANCED INFORMATION

Recommended

Procedure

(for biasing and

operation)

CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT CAN

DAMAGE THE AMPLIFIER.

The following sequence must be followed to properly test the amplifier:

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the

ground of the chip carrier.

Slowly apply negative gate bias supply

voltage of -1.5 V to Vg.

Step 3: Slowly apply positive drain bias supply

voltage of +3.5 V to Vd.

Step 4: Adjust gate bias voltage to set the

quiescent current of Idq=350 mA.

Step 5: After the bias condition is established, the

RF input signal may now be applied at the

appropriate frequency band.

Step 6: Follow turn-off sequence of:

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd),

(iii) Turn down and off gate bias voltage

(Vg).

Application

Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and

high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be

machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15

minutes.

Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid

hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used

as RF and DC Ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent

contamination of bonding surfaces. These are ESD sensitive devices and should be handled with

appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond

equipment must be well grounded to prevent static discharges through the device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as

practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012”

long corresponding to a typical 2 mil gap between the chip and the substrate material.

www.raytheonrf.com

Specifications are based on most current or latest revision.

Revised February 6, 2003

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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