RMDA20420(2002) Просмотр технического описания (PDF) - Raytheon Company
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RMDA20420 Datasheet PDF : 9 Pages
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RMDA20420
20-42 GHz General Purpose MMIC Amplifier
Application
Information
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typical 2 mil gap between the chip and the substrate material.
Figure 1
Functional Block
Diagram
RF IN
MMIC Chip
Drain Supply
(1st Stage)
Vd1
Vg2 alt
Vd2
Drain Supply
(2nd-4th Stages)
Vd3
Vd4
RF OUT
Vg1
Vg2
Vg3
Vg4
Gate Supply
(1st Stage)
Gate Supply
(2nd-4th Stages)
Ground
(Back of Chip)
Figure 2
Chip Layout and
Bond Pad Locations
Chip Size=0.0677” x
0.30” x 0.002”
(1720 µm x 760 µm
x 50 µm)
0.0249”
(0.630mm)
0.0189”
(0.480mm)
0.013”
(0.330mm)
0.0130”
(0.335mm)
0.0275” 0.0365”
0.0465”
(0.700mm) (0.930mm) (1.180mm)
0.0575”
1.465mm)
0.0299”
(0.760mm)
0.0185”
(0.465mm)
0.0125”
(0.315mm)
0.0
0.0
0.004”
(0.1mm)
0.0168”
0.430mm)
0.028”
(0.715mm)
0.0475”
(1.200mm)
0.0065”
(0.165mm)
0.004”
(0.1mm)
0.0677”
0.0064” (1.70mm)
(1.620mm)
Back of Chip is RF and DC Ground
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
Revised March 6, 2002
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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