RMDA20420(2002) Просмотр технического описания (PDF) - Raytheon Company
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RMDA20420 Datasheet PDF : 9 Pages
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RMDA20420
20-42 GHz General Purpose MMIC Amplifier
Description
ADVANCED INFORMATION
The Raytheon RMDA20420 is a broadband general purpose driver amplifier designed for use in point to point radio,
point to multi-point communications, LMDS, SatCom and other millimeter wave applications. The RMDA20420 is a
fully matched GaAs MMIC utilizing Raytheon’s advanced 0.15µm gate length PHEMT process.
Features
Wideband 20 - 42 GHz operation
22 dB small signal gain (typ.)
23 dBm saturated power output (typ.)
Matched to 50 Ohms
Optional bonding configuration for multiplier applications
Chip Size 1.720 mm x 0.760 mm
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage (+3.5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Base Plate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
Id
Pin
Tc
Tstg
Rjc
Value
+5
-2
+7
600
15
-30 to +70
-55 to +125
57
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics1
Parameter
Min Typ
Frequency Range
20
Drain Supply Voltage (Vd) 2
3.5
Gate Supply Voltage (Vg)2 -2 -0.2
Gain Small Signal Gain
20 22
Gain Variation vs.
Frequency
+/-2.5
Power Output at
1 dB Compression
21
Max Unit
42 GHz
5V
0.5 V
dB
dB
dBm
Parameter
Power Output Saturated
Drain Current at
P1 dB Compression
Drain Current at Psat
Input Return Loss
(Pin=-20 dBm)
Output Return Loss
(Pin=-20 dBm)
Min Typ
22 23
355
362
12
10
Max Unit
dBm
mA
mA
dB
dB
www.raytheonrf.com
Notes:
1. Operated at 25 °C, 50 Ohm system, Vd=+3.5 V, quiescent current (Idq)=350 mA.
2. Typical range of the negative gate voltage is -0.5 to 0.0V to set typical Idq of 350 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised March 6, 2002
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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