K3163(2010) Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
K3163 Datasheet PDF : 10 Pages
| |||
2SK3163
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
100
VGS = 10 V
Pulse Test
5V
80
4V
3.5 V
60
40
3V
20
2.5 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
0.4
10 A
0
4
ID = 50 A
20 A
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.3.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
1000
300
100
30
10
3
1
Operation in
this area is
DC
PW
= 10
(OTpce=ra2ti5o°nC)
1 m10s01µ0sµs
ms (1 shot)
limited by RDS(on)
0.3
0.1 Ta = 25°C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
80 Pulse Test
60
40
25°C
20
75°C
Tc = –25°C
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
100
Pulse Test
50
20
10
VGS = 4 V
5
10 V
2
1
12
5 10 20 50 100 200
Drain Current ID (A)
Share Link: 